1 3 2 pin 16.5 0.3 10.2 0.2 15.0 0.5 4.0 0.3 13.5 0.5 2.6 0.15 1.4 0.1 0.6 0.1 4.5 0.2 3.1 +0.2 -0.1 |? 3 . 3 0 . 1 ?3.20.2 8.2 0.2 2.6 0.2 0.6 0.1 features mechanical data position: any maximum ratings and electrical characteristics r a t i ng s a t 2 5 ambient temperature unless otherwise specified. units maximum recurrent peak reverse voltage v rrm v max imum rms v oltage v r m s v maximum dc blocking voltage v dc v maximum average forw ard total device 11111111 m rectif ied current @t c = 1 2 5 c i f (a v ) a peak forw ard surge current 8.3ms single half b s i ne - w a v e s u pe r i m p o s e d on r ated l o a d i f s m a m a x i m u m f o r w a r d f = 8.0 a , t c = 2 5 ) v o l ta g e per l e g (i ( n o t e 1 ) maximum reverse current @t c = 2 5 at rated dc blocking voltage @t c = 1 2 5 m a x i m u m t h e r m a l r e s i s t a n c e (note 2) r j c /w o p e r a t i ng j u n c t i o n t e m p e r at u r e r a n ge t j s t o r a ge te m pe r atu r e r an g e t stg 2 . t h er m al r e s i s t a n c e f r om j u n c t i on t o c a s e and t her m al r e s i s t a n c e f r om j u n c t i on t o a m b i e n t . m a 80 100 1 6 . 0 150 . 0 56 70 m b r f 1 6 100 c t 80 100 v o l t a g e r a n g e: 80 - 10 0 v curr e n t : 1 6 a metal silicon junction, majority carrier conduction. ca s e : j e d e c ito-220ab , m o l ded p l a s t i c body dual s cho t t ky r e c t i f i e rs high current capacity, low forward voltage drop. n o t e : 1 . p u l s e t e s t: 3 0 0 s pu l s e w i d t h , 1% d u t y c y c l e. - 5 5 - --- + 1 50 - 5 5 - --- + 15 0 terminals:leads, solderable per mil-std-750, 1 1 m e t hod 2026 i r v f 1.0 1.5 ito-220ab mbr f 1 6 80 ct---mbr f 1 6 10 0ct m b r f 1 6 80 c t g ua r d r i ng f or o v er v o l t age p r o t e c t i on. high surge capacity. for use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. polarity: as m arked w e i gh t : 0.08ounce, 2.24 grams 100 v 0 . 85 dimensions in millimeters diode semiconductor korea www.diode.kr
.01 0 0.1 1.0 10 100 80 60 40 20 100 t j =25 t j =125 0. 4 0.5 0.6 0.7 0.8 0.9 0 . 01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 2 4 10 2 0 t j =25 pulse width=300us 25 150 1 10 100 125 100 75 50 175 t j =t j max. 8.3ms single half sine wave (jedec method) 2 0 16 1 2 8 4 0 0 50 100 150 resistive or inductive load average forward current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,milliamperes mbrf1680ct---MBRF16100CT f i g .3 - - t y p i ca l i n s t a n t a n e o u s f o r w a r d c h ara c t e r i s t i c p e r l e g f i g . 4 - - t y p i cal r e v e r s e cha r ac t e r i s t i cs 111 c ase t e m pe r a t u r e p e rc e n t o f r a t ed pe a k r ev e r se v o l t a g e , f i g . 1 - - f o r w a rd cur r e n t d e ra t i n g c u r v e f i g .2 - - m a x i m u m n o n - r e p e t i t i v e p e a k f o r w ard s u r g e cur r e n t p e r l e g nu m be r o f c y c l e s a t 6 0 h z i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s www.diode.kr diode semiconductor korea
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